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igbt highspeed5igbtintrenchstop tm 5technology IGP30N65H5 650vigbthighspeedswitchingseriesfifthgeneration datasheet industrialpowercontrol
2 IGP30N65H5 highspeedswitchingseriesfifthgeneration rev.2.2,2014-12-04 highspeed5igbtintrenchstop tm 5technology featuresandbenefits: highspeedh5technologyoffering ?best-in-classefficiencyinhardswitchingandresonant topologies ?plugandplayreplacementofpreviousgenerationigbts ?650vbreakdownvoltage ?lowgatechargeq g ?maximumjunctiontemperature175c ?qualifiedaccordingtojedecfortargetapplications ?pb-freeleadplating;rohscompliant ?completeproductspectrumandpspicemodels: http://www.infineon.com/igbt/ applications: ?solarconverters ?uninterruptiblepowersupplies ?weldingconverters ?midtohighrangeswitchingfrequencyconverters keyperformanceandpackageparameters type v ce i c v cesat , t vj =25c t vjmax marking package IGP30N65H5 650v 30a 1.65v 175c g30eh5 pg-to220-3 g c e g c e c
3 IGP30N65H5 highspeedswitchingseriesfifthgeneration rev.2.2,2014-12-04 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 g c e g c e c
4 IGP30N65H5 highspeedswitchingseriesfifthgeneration rev.2.2,2014-12-04 maximumratings foroptimumlifetimeandreliability,infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. parameter symbol value unit collector-emittervoltage, t vj 3 25c v ce 650 v dccollectorcurrent,limitedby t vjmax t c =25c t c =100c i c 55.0 35.0 a pulsedcollectorcurrent, t p limitedby t vjmax i cpuls 90.0 a turn off safe operating area v ce 650v, t vj 175c, t p =1s - 90.0 a gate-emitter voltage transientgate-emittervoltage( t p 10s,d<0.010) v ge 20 30 v powerdissipation t c =25c powerdissipation t c =100c p tot 188.0 93.0 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+150 c soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s 260 c mounting torque, m3 screw maximum of mounting processes: 3 m 0.6 nm thermalresistance parameter symbol conditions max.value unit characteristic igbt thermal resistance, junction - case r th(j-c) 0.80 k/w thermal resistance junction - ambient r th(j-a) 62 k/w electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =0.20ma 650 - - v collector-emitter saturation voltage v cesat v ge =15.0v, i c =30.0a t vj =25c t vj =125c t vj =175c - - - 1.65 1.85 1.95 2.10 - - v gate-emitter threshold voltage v ge(th) i c =0.30ma, v ce = v ge 3.2 4.0 4.8 v zero gate voltage collector current i ces v ce =650v, v ge =0v t vj =25c t vj =175c - - - - 40.0 4000.0 a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =30.0a - 39.5 - s g c e g c e c
5 IGP30N65H5 highspeedswitchingseriesfifthgeneration rev.2.2,2014-12-04 electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic input capacitance c ies - 1800 - output capacitance c oes - 45 - reverse transfer capacitance c res - 7 - v ce =25v, v ge =0v,f=1mhz pf gate charge q g v cc =520v, i c =30.0a, v ge =15v - 70.0 - nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 7.0 - nh switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =25c turn-on delay time t d(on) - 19 - ns rise time t r - 9 - ns turn-off delay time t d(off) - 177 - ns fall time t f - 14 - ns turn-on energy e on - 0.28 - mj turn-off energy e off - 0.10 - mj total switching energy e ts - 0.38 - mj t vj =25c, v cc =400v, i c =15.0a, v ge =0.0/15.0v, r g(on) =23.0 w , r g(off) =23.0 w , l s =30nh, c s =30pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. turn-on delay time t d(on) - 18 - ns rise time t r - 4 - ns turn-off delay time t d(off) - 180 - ns fall time t f - 22 - ns turn-on energy e on - 0.09 - mj turn-off energy e off - 0.03 - mj total switching energy e ts - 0.12 - mj t vj =25c, v cc =400v, i c =5.0a, v ge =0.0/15.0v, r g(on) =23.0 w , r g(off) =23.0 w , l s =30nh, c s =30pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. g c e g c e c
6 IGP30N65H5 highspeedswitchingseriesfifthgeneration rev.2.2,2014-12-04 switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =150c turn-on delay time t d(on) - 18 - ns rise time t r - 10 - ns turn-off delay time t d(off) - 208 - ns fall time t f - 16 - ns turn-on energy e on - 0.41 - mj turn-off energy e off - 0.14 - mj total switching energy e ts - 0.55 - mj t vj =150c, v cc =400v, i c =15.0a, v ge =0.0/15.0v, r g(on) =23.0 w , r g(off) =23.0 w , l s =30nh, c s =30pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. turn-on delay time t d(on) - 16 - ns rise time t r - 5 - ns turn-off delay time t d(off) - 228 - ns fall time t f - 27 - ns turn-on energy e on - 0.15 - mj turn-off energy e off - 0.05 - mj total switching energy e ts - 0.20 - mj t vj =150c, v cc =400v, i c =5.0a, v ge =0.0/15.0v, r g(on) =23.0 w , r g(off) =23.0 w , l s =30nh, c s =30pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. g c e g c e c
7 IGP30N65H5 highspeedswitchingseriesfifthgeneration rev.2.2,2014-12-04 figure 1. forwardbiassafeoperatingarea ( d =0, t c =25c, t vj 175c, v ge =15v, t p =1s. recommendeduseat v ge 3 7.5v) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 1 10 100 1000 0.1 1 10 100 not for linear use figure 2. powerdissipationasafunctionofcase temperature ( t vj 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 160 180 200 figure 3. collectorcurrentasafunctionofcase temperature ( v ge 3 15v, t vj 175c) t c ,casetemperature[c] i c ,collectorcurrent[a] 25 50 75 100 125 150 175 0 10 20 30 40 50 60 figure 4. typicaloutputcharacteristic ( t vj =25c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 5 0 10 20 30 40 50 60 70 80 90 v ge =18v 15v 12v 10v 8v 7v 6v 5v 4v g c e g c e c
8 IGP30N65H5 highspeedswitchingseriesfifthgeneration rev.2.2,2014-12-04 figure 5. typicaloutputcharacteristic ( t vj =150c) v ce ,collector-emittervoltage[v] i c ,collectorcurrent[a] 0 1 2 3 4 5 0 10 20 30 40 50 60 70 80 90 v ge =18v 15v 12v 10v 8v 7v 6v 5v 4v figure 6. typicaltransfercharacteristic ( v ce =20v) v ge ,gate-emittervoltage[v] i c ,collectorcurrent[a] 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 10 20 30 40 50 60 70 80 90 t j =25c t j =150c figure 7. typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature ( v ge =15v) t vj ,junctiontemperature[c] v cesat ,collector-emittersaturation[v] 0 25 50 75 100 125 150 175 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 i c =7.5a i c =15a i c =30a figure 8. typicalswitchingtimesasafunctionof collectorcurrent (inductiveload, t vj =150c, v ce =400v, v ge =15/0v, r g =23 w ,dynamictestcircuitin figure e) i c ,collectorcurrent[a] t ,switchingtimes[ns] 0 10 20 30 40 50 60 70 80 90 1 10 100 t d(off) t f t d(on) t r g c e g c e c
9 IGP30N65H5 highspeedswitchingseriesfifthgeneration rev.2.2,2014-12-04 figure 9. typicalswitchingtimesasafunctionofgate resistor (inductiveload, t vj =150c, v ce =400v, v ge =15/0v, i c =15a,dynamictestcircuitin figure e) r g ,gateresistor[ w ] t ,switchingtimes[ns] 5 15 25 35 45 55 65 75 85 1 10 100 1000 t d(off) t f t d(on) t r figure 10. typicalswitchingtimesasafunctionof junctiontemperature (inductiveload, v ce =400v, v ge =15/0v, i c =15a, r g =23 w ,dynamictestcircuitin figure e) t vj ,junctiontemperature[c] t ,switchingtimes[ns] 25 50 75 100 125 150 175 1 10 100 t d(off) t f t d(on) t r figure 11. gate-emitterthresholdvoltageasafunction ofjunctiontemperature ( i c =0.3ma) t vj ,junctiontemperature[c] v ge(th) ,gate-emitterthresholdvoltage[v] 0 25 50 75 100 125 150 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 typ. min. max. figure 12. typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload, t vj =150c, v ce =400v, v ge =15/0v, r g =23 w ,dynamictestcircuitin figure e) i c ,collectorcurrent[a] e ,switchingenergylosses[mj] 0 10 20 30 40 50 60 70 80 90 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 e off e on e ts g c e g c e c
10 IGP30N65H5 highspeedswitchingseriesfifthgeneration rev.2.2,2014-12-04 figure 13. typicalswitchingenergylossesasa functionofgateresistor (inductiveload, t vj =150c, v ce =400v, v ge =15/0v, i c =15a,dynamictestcircuitin figure e) r g ,gateresistor[ w ] e ,switchingenergylosses[mj] 5 15 25 35 45 55 65 75 85 0.0 0.2 0.4 0.6 0.8 1.0 1.2 e off e on e ts figure 14. typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload, v ce =400v, v ge =15/0v, i c =15a, r g =23 w ,dynamictestcircuitin figure e) t vj ,junctiontemperature[c] e ,switchingenergylosses[mj] 25 50 75 100 125 150 175 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 e off e on e ts figure 15. typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload, t vj =150c, v ge =15/0v, i c =15a, r g =23 w ,dynamictestcircuitin figure e) v ce ,collector-emittervoltage[v] e ,switchingenergylosses[mj] 200 250 300 350 400 450 500 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 e off e on e ts figure 16. typicalgatecharge ( i c =30a) q ge ,gatecharge[nc] v ge ,gate-emittervoltage[v] 0 10 20 30 40 50 60 70 80 0 2 4 6 8 10 12 14 16 130v 520v g c e g c e c
11 IGP30N65H5 highspeedswitchingseriesfifthgeneration rev.2.2,2014-12-04 figure 17. typicalcapacitanceasafunctionof collector-emittervoltage ( v ge =0v,f=1mhz) v ce ,collector-emittervoltage[v] c ,capacitance[pf] 0 5 10 15 20 25 30 1 10 100 1000 1e+4 c ies c oes c res figure 18. igbttransientthermalimpedance ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalimpedance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 1 0.001 0.01 0.1 1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.07749916 3.7e-5 2 0.2797936 3.6e-4 3 0.2828165 4.9e-3 4 0.1598907 0.04086392 g c e g c e c
12 IGP30N65H5 highspeedswitchingseriesfifthgeneration rev.2.2,2014-12-04 g c e g c e c pg-to220-3
13 IGP30N65H5 highspeedswitchingseriesfifthgeneration rev.2.2,2014-12-04 g c e g c e c pg-to220-3 t a a b b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge v ge (t) t t i c (t) v ce (t) 90% v ge v ge (t) t t v ce (t) t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i c (t) parasitic inductance l , parasitic capacitor l , relief capacitor c , (only for zvt switching) s s r
14 IGP30N65H5 high speed switching series fifth generation rev. 2.2, 2014-12-04 revision history IGP30N65H5 previous revision revision date subjects (major changes since last revision) 2.1 2014-06-11 final data sheet 2.2 2014-12-04 minor changes fig.1 and fig.14 g c e g c e c pg-to220-3 t a a b b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge v ge (t) t t i c (t) v ce (t) 90% v ge v ge (t) t t v ce (t) t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc di /dt f di i,v figure a. figure b. figure c. definition of diode switching characteristics figure e. dynamic test circuit figure d. i c (t) parasitic inductance l , parasitic capacitor l , relief capacitor c , (only for zvt switching) s s r

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